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Photoemission Studies of Interface Effects on Thin Film界面效应对薄膜的光电子能谱研究
Final examination, April 18, 2006 Thermal Stability Temperature Annealing temperature at which smooth film structure roughens Thermal energy allows atomic rearrangement T Tstability T Tstability Compare Pb films w/ 3 interfactants: Final examination, April 18, 2006 Electronic Stability Thermal stability Total film electronic energy Quantized electronic structure Quantum well energy levels change with N Layer-to-layer variation in total electronic energy Thickness-dependent thermal stability Final examination, April 18, 2006 Thickness Oscillations in Pb Films e- fill quantum wells w/ increasing N “Shell effect” – periodic oscillation in total energy and film properties ΔN = 2.2 ML @ integer sampling Beating pattern Characteristic oscillation in work function, charge density distribution, interlayer lattice spacing, TC Final examination, April 18, 2006 Quantum Well Spectroscopy Redux Interface phase shift In Au Pb A = -1.70 0.29 2.21 In and Pb diff. by ~π ΔN = 1 equivalent to phase change of π * Final Examination April 18th, 2006 Dominic A. Ricci Department of Physics University of Illinois at Urbana-Champaign Photoemission Studies of Interface Effects on Thin Film Properties Final examination, April 18, 2006 Threshold of Technology 1947 2006 2020 10-1 m 10-7 m 10-9 m 3.5 million transistors Year Length Scale Final examination, April 18, 2006 On the Atomic Scale When physical structures e- coherence length quantum effects manifest Thin films 1D e- confinement quantum well states Pure Science Applied Technology Understand quantum physics of thin films Thin films are building blocks Quantum wells dominate properties of thin films Final examination, April 18, 2006 Film Properties Schottky barrier height Rectifying energy barrier at metal-semiconductor junction Confines electrons in film Determines transport properties in solid-state devices Thermal stability temperature Annealing temperature at which smooth film structure roughens Relevant to
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