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A measurement of Lorentz Angle of radiation-hard Pixel Sensors.pdf

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A measurement of Lorentz Angle of radiation-hard Pixel Sensors

a r X i v : p h y s i c s / 0 0 1 2 0 5 0 v 1 [ p h y s i c s .i n s - d e t ] 2 0 D e c 2 0 0 0 A Measurement of Lorentz Angle of Radiation-Hard Pixel Sensors Mario Aleppo a,1 aDipartimento di Fisica, Universita? di Milano and INFN, Sezione di Milano, Via Celoria 16, I-20133 Milano, Italy Abstract Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The mea- surement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown. 1 Introduction In the presence of an electric field E and a magnetic field B mutually orthogonal the charge carriers move along a direction that forms an an- gle γ ( Lorentz angle ) with the elec- tric field. This angle affects the area of collection of the charge carriers. Resolution and efficiency of the de- tector depend on the track incidence angle and on the charge drift angle: the determination of this angle is therefore very important to define the mechanical design and optimize detector performance. The silicon pixel detector of the AT- 1 On Behalf of the ATLAS Pixel Col- laboration[1] LAS experiment will be exposed at intense fluxes of radiation during its lifetime; as a result the properties and the conditions of operation of the sen- sors will change. Several single chip assemblies were characterised exten- sively in test beam experiments per- formed at the CERN SPS accelerator with a pion beam of 180 GeV/c mo- mentum [2]. A beam telescope consisting of 4 pairs of silicon microstrips detectors (each pair consisting of two planes of de- tectors with orthogonal strips) was used to measure the transverse posi- tion of the incident beam particles. T