- 1、本文档共6页,可阅读全部内容。
- 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
2N3506Lthru2N3507AL.PDF
2N3506L thru 2N3507AL
NPN MEDIUM POWER SILICON Qualified Levels:
JAN, JANTX and
Available on
commercial TRANSISTOR JANTXV
versions Qualified per MIL-PRF-19500/349
DESCRIPTION
This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature
low saturation voltage. These devices are also available in TO-5 and low profile U4
packaging. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
Important: For the latest information, visit our website .
FEATURES
?
JEDEC registered 2N3506 through 2N3507 series. TO-5 Package
? RoHS compliant versions available (commercial grade only).
? VCE(sat) = 0.5 V @ IC = 500 mA.
? Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
Also available in:
? Fall time tf = 35 ns max
文档评论(0)