Analytic Model for Conduction Current in AlGaNGaN HFETsHEMTs英文文献资料.docVIP

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Analytic Model for Conduction Current in AlGaNGaN HFETsHEMTs英文文献资料.doc

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Analytic Model for Conduction Current in AlGaNGaN HFETsHEMTs英文文献资料

HindawiPublishingCorporation ActiveandPassiveElectronicComponents Volume2012,ArticleID806253,11pages doi:10.1155/2012/806253 ResearchArticle AnalyticModelforConductionCurrentinAlGaN/GaN HFETs/HEMTs DanqiongHou,GriffL.Bilbro,andRobertJ.Trew DepartmentofECE,NorthCarolinaStateUniversity,Raleigh,NC27695-7911,USA CorrespondenceshouldbeaddressedtoGri?L.Bilbro,glb@ Received10August2011;Accepted28October2011 AcademicEditor:NarayananBalasubramanian Copyright?2012DanqiongHouetal.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. Wehavedevelopedanew,zone-basedcompactphysics-basedAlGaN/GaNheterojunction?eld-e?ecttransistor(HFET)model suitableforuseincommercialharmonic-balancemicrowavecircuitsimulators.ThenewmodelisprogrammedinVerilog-A,an industry-standardcompactmodelinglanguage.Thenewmodelpermitsthedc,small-signal,andlarge-signalRFperformance forthetransistortobedeterminedasafunctionofthedevicegeometricstructureanddesignfeatures,materialcomposition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extractiontodeterminemodelelementvalues,ascommonlyemployedfortraditionalequivalent-circuit-basedtransistormodels. Thenewmodelhasbeencalibratedandveri?ed.WereportverygoodagreementbetweensimulatedandmeasureddcandRF performanceofanexperimentalC-bandmicrowavepowerampli?er. 1.Introduction The basic structurefor an HFET is shown in Figure1. ThedcandRFperformanceofthetransistorvarieswiththe physicaldimensionsandmaterialproperties.However,the sensitivityofRFpowerperformancetothephysicalparam- eters will vary, depending upon the particular parameter, andvariationsinsomeparameters(e.g.,thegatelength,lg) haveamoresigni?cante?ectupondeviceperformancethan others.Thesespeci?cparametersensitivitiesarenoteasyto determine.Consequently,MMICdesignerscannotconsider thephysicalparametersofthedevicewhen