Annealing Effects on Electrical Properties and Interfacial Reactions of NiCu Schottky Rectifiers on n-Type InP英文文献资料.docVIP

Journal of Modern Physics, 2012, 3, 538-545 /10.4236/jmp.2012.37074 Published Online July 2012 (http://www.SciRP.org/journal/jmp) Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n-Type InP Y. Munikrishna Reddy , M. K. Nagaraj , S. Sankar Naik , V. Rajagopal Reddy 1* 2 3 3 1 Department of Physics, SSBN Degree and PG College, Anantapur, India Department of Physics, Rayalaseema University, Kurnool, India Department of Physics, Sri Venkateswara University, Tirupati, India 2 3 Email: ymkredi@ * Received April 22, 2012; revised May 18, 2012; accepted June 15, 2012 ABSTRACT We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological proper- ties of Ni/Cu Schottky contacts on n-type InP. The extracted barrier height of as-deposited Ni/Cu Schottky contact is 0.59 eV (I-V) respectively. The high-quality Schottky contact with barrier height and ideality factor of 0.65 eV (I-V) and 1.15 respectively, can be obtained after annealing at 300?C for 1 min in a nitrogen atmosphere. However, annealing at 400?C, results the decrease in the barrier height to 0.54 eV (I-V). From the above observations, it is observed that Ni/Cu Schottky contact exhibited excellent electrical properties after annealing at 300?C. Hence, the optimum annealing temperature for the Ni/Cu Schottky contact is 300?C. Furthermore, Cheung’s functions is used to extract the diode pa- rameters including ideality factor, barrier height and series resistance. According to the XRD analysis, the formation of the indium phases at the Ni/Cu/n-InP interface could be the reason for the increase in the barrier height at annealing temperature 300?C. Further, the degradation of the barrier heights after annealing at 400?C may be due to the form