Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells英文文献资料.docVIP

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Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells英文文献资料.doc

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Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells英文文献资料

HindawiPublishingCorporation AdvancesinOptoElectronics Volume2007,ArticleID30569,8pages doi:10.1155/2007/30569 ResearchArticle AnnealingKineticModelUsingFastandSlowMetastable DefectsforHydrogenated-Amorphous-Silicon-Based SolarCells SeungYeopMyong DepartmentofPhysicalElectronics,TokyoInstituteofTechnology(TIT),2-12-1Ookayama,Meguro-Ku,Tokyo152-8552,Japan Received1February2007;Accepted17April2007 RecommendedbyArminG.Aberle The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon-(a-Si:H-)basedsolarcellsissimulatedusinganormalized?llfactor.Reportedannealingdata onpin-typea-Si:H-basedsolarcellsarerevisitedand?ttedusingthemodeltocon?rmitsvalidity.Itisveri?edthatthetwo- componentmodelissuitablefor?ttingthevariousexperimentalphenomena.Inaddition,theactivationenergyforannealing ofthesolarcellsdependsonthede?nitionoftherecoverytime.Fromthethermallyactivatedandhighelectric?eldannealing behaviors,theplausiblemicroscopicmechanismonthedefectremovalprocessisdiscussed. Copyright?2007SeungYeopMyong.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. 1. INTRODUCTION the past 30 years. Despite extensive investigations, there is noconsensusonamicroscopicmechanismthatexplainsall theexperimentalphenomena.Similarly,therecoverymecha- nismfora-Si:H-basedsolarcellsviathermalannealing[4,5] orintenseilluminationathightemperaturewithastrongre- versebias[6]isstillcontroversial.Therecoverykineticsvia thermalannealingisofteninterpretedbythestretchedex- ponential(SE)kinetics[7,8]whereindefectgenerationand annealing in a-Si:H-based materials is a dispersive process controlled by one type of metastable defect [9, 10]. How- ever,severalrecentreportshaveprovidedexperimentalev- idencethata-Si:H-basedmaterialspossess“fast”and“slow” metastabledefects,andthusthetotaldefectdensi