Room Temperature Ammonia Gas Sensing Using Mixed Conductor based TEMPOS Structures 英文参考文献.docVIP
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Room Temperature Ammonia Gas Sensing Using Mixed Conductor based TEMPOS Structures 英文参考文献
Sensors 2008, 8, 6355-6370; DOI: 10.3390/s8106355
OPEN ACCESS
sensors
ISSN 1424-8220
/sensors
Article
Room Temperature Ammonia Gas Sensing Using Mixed
Conductor based TEMPOS Structures
Mamta Saroch 1, Sunita Srivastava 1, Dietmar Fink 2 and Amita Chandra 3,*
1
Department
of
Physics,
Panjab
University,
160014
Chandigarh,
India;
E-mails:
mamtasaroch@yahoo.co.in; sunita@pu.ac.in
2
3
Hahn-Meitner-Institute, Glienicker Str. 100, D-14109 Berlin, Germany; E-mail: fink@hmi.de
Department of Physics and Astrophysics, University of Delhi, 110007 Delhi, India;
* Author to whom correspondence should be addressed; E-mail: achandra@physics.du.ac.in
Received: 20 August 2008; in revised form: 18 September 2008 / Accepted: 7 October 2008 /
Published: 14 October 2008
Abstract: The current/voltage characteristics of mixed (ion+electron) conductor-based
‘TEMPOS’ (Tunable Electronic Material with Pores in Oxide on Silicon) structures are
reported. TEMPOS are novel electronic MOS-like structures having etched swift heavy ion
tracks (i.e., nanopores) in the dielectric layer filled with some conducting material. The
three contacts (two on top and one on the bottom), which resemble the classical bipolar or
field effect transistor arrangements are, in principle, interchangeable when the overall
electrical resistance along the tracks and on the surface are similar. Consequently, three
configurations are obtained by interchanging the top contacts with the base contact in
electronic circuits. The current/voltage characteristics show a diode like behaviour.
Impedance measurements have been made for TEMPOS structures with tracks filled with
ion conductors and also mixed conductors to study the ammonia sensing behaviour. The
impedance has been found to be a function of frequency and magnitude of the applied signal
and concentration of the ammonia solution. This is attributed to the large number o
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