第一章 模拟电子技术基础（Chapter 1 Fundamentals of Analog Electronic Technology）.doc

第一章 模拟电子技术基础（Chapter 1 Fundamentals of Analog Electronic Technology） This paper contributed by mvpofnba. PPT document may at the WAP end of the browsing experience poor. Suggest you select TXT, or download the source file to the machine view. Fundamentals of Analog Electronic Technology Taiyuan University of Technology Han Xiaoming (Lecturer) The first chapter, the commonly used semiconductor device 1.1 basic knowledge of semiconductor semiconductor: between conductivity between conductor and insulator such as silicon and germanium characteristics: 1, 2, 3, the heat conductivity of doped, photosensitive 4 1.1.1 definition: the intrinsic semiconductor semiconductor pure structure complete. Such as high purity silicon germanium (14) and (32) of all 1432 tetravalent element. Stereo diagram Plan Characteristic： 1, absolute zero and no external excitation, not conductive. 2, temperature, few valence electrons due to thermal excitation to obtain enough energy, a free electron, electrical conductivity. The concept of free electrons and holes, carrier, intrinsic excitation intrinsic excitation in semiconductors: covalent bond splitting of the electron and hole process. (heat, light, radiation) recombination: energy reduction of free electron movement process, fill the hole recovery of covalent bond. Intrinsic carrier concentration formula Ni = pi = K1T e 23 EGO (2 kT)? T is the thermodynamic temperature, for the Boltzmann constant, K EGO is required for the thermodynamic zero failure of covalent bond energy, Also known as the forbidden band width is K1 and the semiconductor material carrier effective mass and effective energy density related constants. The different semiconductor carrier concentration, mainly by the material structure of the atom, the binding capacity of size. 1.1.2 impurity semiconductor 1, N type semiconductor (incorporating elements such as pentavalent arsenic or phosphorus), electron hole, positive ion carrier: electron and hole is not only charged ion