the compromise condition for high performance of the single silicon heterojunction solar cells高性能的妥协条件单一硅异质结太阳能电池.pdfVIP

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2012, Article ID 283872, 6 pages doi:10.1155/2012/283872 Research Article The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells Youngseok Lee,1 Vinh Ai Dao,2, 3 Sangho Kim,1 Sunbo Kim,3 Hyeongsik Park,3 Jaehyun Cho,3 Shihyun Ahn,3 and Junsin Yi1, 3 1 Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea 2 College of Science, Faculty of Materials Science, Vietnam National University, 227 Nguyen Van Cu, Hochiminh, Vietnam 3 School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea Correspondence should be addressed to Junsin Yi, yi@yurim.skku.ac.kr Received 31 August 2011; Revised 14 November 2011; Accepted 14 November 2011 Academic Editor: C. W. Lan Copyright © 2012 Youngseok Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of