new analysis and design of a rf rectifier for rfid and implantable devices分析和设计新的rfid射频整流器和植入式设备.pdfVIP

Sensors 2011, 11, 6494-6508; doi:10.3390/s110706494 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article New Analysis and Design of a RF Rectifier for RFID and Implantable Devices Dong-Sheng Liu, Feng-Bo Li, Xue-Cheng Zou, Yao Liu, Xue-Mei Hui and Xiong-Fei Tao * Department of Electronic Science Technology, Huazhong University of Science Technology, Wuhan, 430074, China; E-Mails: dsliu@ (D.-S.L.); fbli1987@ (F.-B.L.); estxczou@ (X.-C.Z.); yaoliuhust@ (Y.L.); huixuemei@ (X.-M.H.) * Author to whom correspondence should be addressed; E-Mail: taoxiongfei@. Received: 19 April 2011; in revised form: 19 May 2011 / Accepted: 14 June 2011 / Published: 24 June 2011 Abstract: New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When t