一维纳米材料论文：一维碳化硅纳米材料的制备、表征及性能研究.docVIP

一维纳米材料论文：一维碳化硅纳米材料的制备、表征及性能研究 【中文摘要】碳化硅(SiC)半导体材料具有禁带宽度大、击穿电场高、热稳定性好、热导率和饱和电子漂移速度大等特点,使其在高温、高频、强辐射、大功率等条件下具有良好的性能。而一维SiC纳米材料由于独特的形貌和结构特征,使其具有一些奇特的物理和化学性能,在纳米电子器件、纳米光电子器件、纳米场发射器件、纳米复合材料、催化等方面具有广泛的应用前景。因此,一维SiC纳米材料的制备及性能研究具有重要的意义。本文选用不同的碳源与硅源,采用碳热 【英文摘要】Silicon carbide (SiC) possesses wide band gap, high breakdown electric field, excellent thermal stability, high thermal conductivity and high electron saturation drafting velocity, and these characteristics make SiC excellent properties in high temperature, high frequency, high radiation and high power environment. For their unique morphologies and structure, one-dimensional silicon carbide nanomaterials have special physical and chemical properties, and have wide range of applications in electronic nanodevices, field-emission nanodevices, nanocomposites, catalysis, and so on. Therefore, the preparation and properties research of one-dimensional silicon carbide nanomaterials has considerable significance.In this paper, SiC nanowires have been prepared via carbothermal reduction method using different carbon source and silicon source, and the large-scale preparation technology of SiC nanowires also has been studied. The compositions, morphologies and microstructure of the products were characterized by X-ray powder diffraction, scanning electron microsopy, transmission electron microsopy and selected area electronic diffraction; the optical properties, energy bandgap structure and oxidation resistance were characterized by Fourier transform infrared spectroscopy, fluorescence photometer, UV-Vis spectroscopy and thermal analysis instruments. On the basis of above investigation, the growth mechanism and the factors that affected the growth of SiC nanowires have been analyzed; the thermal stability and relationships between the structure and properties also have been studied. The main conclusions are listed as follows:Firstly, SiC nanowires have been synthesized via carbothermal reduction method by using tetraethoxysilane