蓝宝石衬底材料CMP去除速率的影响因素.pdfVIP

Mic roscopeMeasurementMic rofabri cat ion Equipment 蓝宝石衬底材料CMP 去除速率的影响因素 宗思邈, 刘玉岭, 牛新环, 李咸珍, 张 伟 ( 河北工业大学 微电子研究所, 天津 3 0013 0) : 阐述了 宝石衬底应用的发展前景及加工中存在的问题, 分析了 宝石衬底化学机械抛光 过程中pH 值压力温度流量抛光布等参数对去除速率的影响提出了采用小流量快启动 的方法迅速提高CMP 温度, 在化学作用和机械作用相匹配时 (即高pH 值大流量或低 pH 值, 小流量) 可得到较高去除速率, 且前者速率高于后者实验采用 nm 级SiO2 溶胶为磨料的碱性 抛光液, 使用强碱KOH 作为pH 调节剂, 并加入了适当的表面活性剂及螯合剂等工艺参数为 压力0. 18 MPa温度45 转速60 r/ min, 采用Rodelsuba 60 0 抛光布, 在保证表面质量的同 时得到的最大去除速率为1 1. 35 m/ h : 化学机械抛光; 宝石衬底; 去除速率; nm 级SiO2 溶胶; 抛光布 : N304. 21; N305. 2 : A : 1671-4776 (2009) 01-0050-05 Analysis of Influencing Factors of Sapphire Substrate CMP Removal Rate Zong Simiao, Liu Yuling, Niu Xinhuan, Li Xianzhen, Zhang Wei (I nst it ute of M icr oelectr on ics , H e bei Un iv ers ity of Technology , T ianj in 3 00 13 0, Ch ina) Abstract: he application prospect of sapphire substrates and the problems on the CMP tech nique were summarized. he parameters that affect the removal rate were analyzed, such as pH, pressure, temperature, flow and polishing pad. he way of small flow fast start to raise the CMP temperature rapidly was suggested. he conclusion was obtained that the matching role of chemical and mechanical (high pH, big flow or low pH, small flow) will get a higher removal rate, and the removal rate of the former is higher than that of the latter. he experiment was made by using the alkalescence polishing liquid with the nanometer SiO2 sol as an abrasive, the strong base KOH as a regulator, the proper surfactant and chelating agent. When the pressure is 0 . 18 MPa, the temperature is at 45 , the rotational speed is 60 r/ min and the polishing pad is Rodelsuba 600, the quickest removal rate of 11. 3 5 m/ h