原创力文档Properties of SiO2 electret films charged by ion implantation for MEMS based energy harvesting systems英文文献.pdfVIP
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IOP PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING
J. Micromech. Microeng. 19 (2009) 094003 (6pp) doi:10.1088/0960-1317/19/9/094003
Properties of SiO2 electret films charged
by ion implantation for MEMS-based
energy harvesting systems
1,2,3 ¨ 1,2 2 2
U Mescheder , B Muller , S Baborie and P Urbanovic
1 Department of Computer and Electrical Engineering, Hochschule Furtwangen University,
Robert-Gerwig-Platz 1, 78120 Furtwangen, Germany
2 Institute for Applied Research, Hochschule Furtwangen University, Robert-Gerwig-Platz 1,
78120 Furtwangen, Germany
E-mail: mes@hs-furtwangen.de
Received 17 January 2009, in final form 9 June 2009
Published 26 August 2009
Online at stacks.iop.org/JMM/19/094003
Abstract
This paper presents the results of charging SiO2 thin film electret by ion implantation. A
maximum charge density of 16 mC m−2 has been shown using 500 nm thermal oxide. Charge
is reproducible and stable in time. Two types of ions were used for ion implantation:
+ +
phosphorus (P ) and boron (B ). Directly after implantation, it was found that charging with
B+ resulted in more stable surface potential compared to charging with P+ , but after 50 days
the difference is negligible. The extrapolated long-term stability of SiO2 electrets charged by
ion implantation is around 1 year. SiO2 is a promising electret for energy harvesting, which
can be charged in a reproducible and stable way by ion implantation. The results are compared
to corona charging of SiO2 . The developed process can be used to realize vibration-based
capacitive energy harvester systems using CMOS-compatible processes.
(Some figures in this article are in colour only in the electronic version)
1. Introductio
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