la0 67ca0 33mn1 xfexo3薄膜的制备及物性分析-preparation and physical properties analysis of la0 67ca 0 33mn 1 xf exo 3 thin films.docxVIP

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la0 67ca0 33mn1 xfexo3薄膜的制备及物性分析-preparation and physical properties analysis of la0 67ca 0 33mn 1 xf exo 3 thin films.docx

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la0 67ca0 33mn1 xfexo3薄膜的制备及物性分析-preparation and physical properties analysis of la0 67ca 0 33mn 1 xf exo 3 thin films

La0.67Ca0.33Mn1-xFexO3 薄膜的制备及物性分析THE PREPARATION AND PHYSICAL PROPERTIES OFLA0.67CA0.33MN1-XFEXO3FILMSABSTRACTPerovskite-type manganese oxide has CMR etc. physical properties and its great application potential ,so it has been studied extensively.In this paper, solid state reaction method were preparaed for La0.67Ca0.33Mn1-xFexO3 solid targets.XRD showed that the targets are homogenous phase and typical perovskite-Type structure and show sigle phase , space group Pnma.The calculation of rA is less than the average radius of the distortion threshold, so targets are orthorhombic structure. Film samples are depodited on the LAO (100), MgO (100) by radio frequency magnetron sputtering instrument, the work of the main parameters : thesubstrate temperature was 780 ℃, the oxygen argon ratio of 4:1, Sputtering powerof 200W.Then they are annealed in900 ℃ under O2 to eliminate the inner stress.La0.67Ca0.33Mn0.9Fe0.1O3/LAO thin films may occur in antiferromagnetic phase, thus affecting the film sample magnetization and resistivity properties.For the film La0.67Ca0.33MnO3/LAO, La0.67Ca0.33MnO3/MgO, the electrical transport properties refect Metal-Semiconductor transaction (mark the temperature as TMS) in zero and five field. In the five Tesla, the double-exchange interaction is enhanced ,leading to ascension of resistance . The incorporation of a certain amount of Fe, regardless of LAO substrate or MgO substrates compared with the undoped samples, the resistivity the film La0.67Ca0.33Mn0.9Fe0.1 have increased significantly, meanwhile TMS has dropped significantly.Finally, we have studied infrared absorption spectra of the films andobserved the vibration peak of the corresponding external model (EM), bending mode vibration peak (BM) and the stretching mode vibration peak (SM) . We Obtained the carrier number of samples by K-K transformation .It refect there is a realationship between carrieris and resitivityKEY WORDS: perovskite structure, lattice distortion, infrared abs