gaas mos结构界面特性分析-analysis of gaas mos structure interface characteristics.docx

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2018-06-04 发布于上海
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gaas mos结构界面特性分析-analysis of gaas mos structure interface characteristics.docx

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gaas mos结构界面特性分析-analysis of gaas mos structure interface characteristics

ABSTRACTWiththeincreasingdevelopmentofthesemiconductorindustry,accordingtotheMoore’sLaw,thedevicesbasedonsiliconhavereachedtheirdimensionlimit.Meanwhile,the relevant reliability problems need to be solved. III-Vmaterials includingGaAsbecomeoneofthefuturepromisingsubstratematerialsfortheMOS systemduetotheirprominentelectronmobility.Atthesametime,highkbecomes themostsuitablechoiceforIII-Vs’gatedielectric.However,thereexistsahighinterface trap density between GaAs and high k dielectric,thus leading to an obviousreductioninthechannelcarriermobilityandfinallydegradingtheMOSdevice’s electricalproperties,sothehighinterfacetrapdensityhasbecomeoneofthebiggestchallengesthatlimitthewidespreadapplicationforGaAsMOS.Thisdissertationintroducestheprocesssequencesofthedepositionofhighk gatedielectricsusingALD,basedontheacquisitionofthefundamentalprinciplesandprocessfeaturesofALD.Alsoitgivesthecauseofthetheexistenceofthehightrapdensity.ItisbecausethereexistslowksubstancesincludingGa-O,As-OandAs0onthesurfaceofGaAsthatahighinterface trap densityappears. Meanwhile, thehighinterfacetrapdensityisthereasonfortheeffectofFermilevelpinning,sohow toreducetheproductionoflowksubstancesisthekeyfordecreasingtheinterfacetrapdensity.ThisdissertationprovidesanewGaAsMOSstructure,namely,anAl/Al2O3/ZnO/n-GaAsMOScapacitor,anoverallC-VcharacteristicscanbeobtainedbyC-Vmeasurementsintwodirections(forwardandreverse)andC-V measurementsunderdifferentfrequenciesrangingfrom10kHzto1MHz.Using Termanmethod,weobtaintheinterfacetrapdensity.Alsothecontentoflowk substancesonthesurfaceisobtainablebyTEMandXPSmeasurements.In conclusion,thepriordepositionofthepassivationlayerZnOcaneffectivelyreducetheinterfacetrapdensityontheGaAssurface,thusimprovingtheinterfacequality.Keywords:highkdielectricinterfacetrapdensityFermilevelpinning目录第一章绪论.................................................................................................................13.3 界面质量表征方法...............................................................