介观压容效应在传感器应用方面的分析-analysis of mesoscopic capacitance effect in sensor application.docxVIP

Research about application of the meso-piezo-capacitive effect in the micro sensor devicesAbstractWith the development of modern sensor,therss to higher requirement for its characteristics of specifications and sensitivity, more miniaturization and higher sensitivity is the further development of new sensors direction. The development of semiconductor materials, such as Ⅲ - Ⅴ semiconductor,with the mature of whose research and preparation methods, making many of the material heterojunction physical characteristics were excavated, and applied to many electronic device.mesos-piezoresistive effect is a new type of sensing theories which is based on the heterojunction Ⅲ-Ⅴ semiconductor materials.namely the stress distribution in nano structure will change under the mechanics signal,in some condition the change of the stress can cause electric field built-in,and then the built-in electric field will lead to the quantum level structure of nanobelts change, quantum level change will cause resonance tunneling current change; in short, near the resonant tunneling voltage through the four physical process above can make a weak mechanical signal into a strong electrical signal.The sensor based on the Mesoscopic piezoresistive effect have been tested practicely,and proved that it has higher sensitivity, and can make the miniaturization of devices and can be used as a new theoretical basis of NMES sensor, in order to further enrich, explore new sensor theory, this paper presents a new effect meso- piezo-capacitive effect, and its research about the application for the sensors.meso-piezo-capacitive effect, it is to point to in mesoscopic scales, the variable reactance device is made by heterojunction material,which will cause the stress distribution change,and then will lead to the change of material strain,outside ofl the action of stress distribution, cause material changes under a certain mechanics signal, at last the changes of the material strain have to make the change o