不同掺铟量intmlinbo3晶体结构与性能-crystal structure and properties of intm linbo _ 3 with different indium content.docxVIP
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不同掺铟量intmlinbo3晶体结构与性能-crystal structure and properties of intm linbo _ 3 with different indium content
AbstractIn:Tm:LiNbO3 crystals with varied indium concentration were grown by the Czochralski method. The structure, spectral properties, occupying mechanism and optical damage resistance of In:Tm:LiNbO3 crystals with varied indium concentration have been systematically investigated by XRD, IR absorption spectra, ultraviolet-visible absorption spectra, emission spectra and transmission photospheric facula deformation method.The results show that in In:Tm:LiNbO3 crystals, In3+ ions replace theantisite Nb and vacancy Li firstly. When the In3+ concentration reaches the4+3+threshold value concentration, almost all the NbLiions are replaced by In .When the doping concentration of In3+ is over the threshold concentration, the In3+ ions begin to replace the Nb sites.As the concentration of In3+ increases, the defect density in the crystal increases. Meanwhile the optical damage resistance of the crystal get stronger. NbLi, the electron traps, vanish as the In3+ concentration reaches the threshold value concentration, and the optical damage resistance becomes the strongest.Based on the vacancy Li modal, we calculated the threshold value concentration as 1.53mol% according to the principle of charge balance. However the actual value is 3mol%. We supposed that this discrepancy demonstrates the existence of interstice In.359nm(3H6→1D2), 475nm(3H6→1G4), 695nm(3H6→3F3), 793nm(3H6→3F4)absorption peaks were observed. Transition processes of the energy levels of Tm3+ were analyzed in details.Excited by 360 nm light, 463nm(1D2→3H4) emission peak was observed.Excited by 720 nm light, 469nm(1D2→3H4) and 613nm(1G4→3H4) up-converse emission peaks were observed. Mechanism of up-conversion above were ESA(excited state absorption).Keywords: In:Tm:LiNbO3 crystal; up-converse fluorescence; optical damage resistance- II -目 录摘 要.............................................................................................................................IAbstract ....
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