ZnO纳米线阵列的制备及H+掺杂的影响-材料工程专业论文.docxVIP

Ab Abstract II II Abstract ZnO nanowire arrays has a large surface area, excellent optical properties and electron transport properties, which results in a great potential in the improvement of dye-sensitized solar cell(DSSC). This paper describes the morphology changes and defect condition and optical properties under the effect of H+ doping. In this paper, we use ethylene glycol monomethyl ether as a solvent, zinc acetate dihydrate as the starting material and amine as catalyst to prepare the sol by sol-gel method. Afterward, the sol was coated by spinning on the ITO-coating glass. Subsequently, we fabricated ZnO nanowire by water bath method through the reaction of zinc nitrate hexahydrate and hexamethylenetetramine on the basis of the seed layer. Doping H+ on the ZnO seed layer and ZnO nanowire arrays though proton irradiation. And then ZnO nanowire arrays were fabricated on the doped sample. The morphology, optical properties and defects have changed when H+ was doped, and the effects of H+ doping in ZnO though proton irradiation have been studied. The results have showed that the optimal process parameters of synthesizing ZnO nanowire arrays were 0.1 mol/L sol to prepare ZnO seed layer and 0.025mol/L solution to grow ZnO nanowires by water bath. The optical transmittance of ZnO seed layer and ZnO nanowire arrays were decreased both before and after the H+ doping, and their UV emission peak intensity segment also have reducing trends. Scan photos and X-ray diffraction results show that the quantity of ZnO, which was fabricated after irradiation, was less with the increasing of H+, According to photoluminescence results, the ultraviolet and visible light-emitting peak intensity of ZnO nanowire arrays decrease with the increasing of H+, because of the proton quenching effect, while the H + doping samples grew on ZnO nanowire arrays in turn reduced the quenching effect of H+ adoption. Key word： ZnO nanowire arrays, H+ doping, optical properties, defects 目 目 录 P