ZnO荧光薄膜的制备及特性分析-环境工程专业论文.docxVIP

-1- -1- 摘要 本课题采用直流反应磁控溅射的方法，在镀有透明导电薄膜 ITO 的玻璃衬 底上制备了 ZnO 荧光薄膜，改变了以往研究者在硅衬底或蓝宝石衬底上制备 ZnO 薄膜的方法，因此制备的样品可以直接作为阳极荧光屏用于场发射平板显示器。 实验采用提高衬底温度、改变反应气氛中的氧氢比，以及返火处理的方法优化荧 光层的性能。通过 XRD 、SEM、四点探针对样品的结构、形貌、导电特性进行 了测试，利用荧光光谱仪、亮度计对样品的光致发光和阴极射线发光特性进行了 分析。研究了 ZnO 薄膜的结晶状况、成分、点缺陷浓度等因素与其发光特性之 间的关系。实验表明，高的结晶质量和-致的 C 轴取向性是 ZnO 薄膜受激可发 射紫外光及蓝绿光的一个首要前提。同时为了得到高效的蓝绿光的发射，薄膜中 必须含有适量的氧空位及铸填隙的数目。对于结品质量较差的 ZnO 薄膜，由于 其内部位错、晶界等缺陷的影响，不仅发光的强度较弱，而且呈现出橙、红、紫 多谱带发光的特性。 ? 关键词:氧化辞:荧光薄膜:磁控溅射;场发射平板显示; 光致发光;阴极射线发光 胃口- 胃口- Abstract Zinc oxide fluorescent thin films were deposited by reactive DC magnetron sputtering on glass substrates coated with tin-doped indium oxide (ITO) thin films. The substrates were different 丘。m those silicon or sapphire substrates that were usually used to fabricate zinc oxide films by some anothers. Therefore the films can be used as anode phosphor films in field emission displays (FED) directly. In order to optimize the phosphor thin films，the substrates temperature was increased and the ambience of the reaction was changed gradually. Furthermore the samples were annealed after deposition. X-ray di岱action (XRD)，scan electron microscope (SEM)， four point probe were employed to characterize their structure ，morphology，electrical resistivity. Photoluminescence and cathode-luminescence characteristics of these films were studied by f1uorescence spectrophotometer and light intensity meter， respectively.ηle relations between the luminescence of zinc oxide thin films and their character including crysta1 s甘uct旧e，composition ，the intrinsic defect，etc were investigated. It suggested that high crystal quality with strong orientation is important for UV and blue-green emission 企om ZnO films. Moreover there should have adequate oxygen vacancies and zinc interstitials for blue-green luminescence. The 1uminescent intensity of the ZnO thin films with poor crystal struct山.e were very weak and various luminescence such as orange，red and violet band occurr