ZnO薄膜在不同衬底上的生长及其应用-微电子学与固体电子学专业论文.docxVIP

ZnO ZnO 薄膜在不同衬底上的生长及其应用 GROWTH OF ZnO THIN FILMS ON DIFFERENT SUBSTRATES AND ITS APPLICATIONS ABSTRACT Zinc Oxide is a novel third-generation semiconductor materials with wide band-gap. Similar to GaN,ZnO exhibits a hexagonal structure with a direct band gap of 3.26 eV at room temperature,while the exciton binding energy of ZnO(60 meV) is much larger than that of GaN(25 meV)and the thermal energy of 26 meV at room temperature.Such high binding energy ensures survival of excitons which can stimulate UV emission even at room temperature,as this characteristic, ZnO is considered to be a potential material for ultraviolet-emitting diode、laser and detector.Moreover ,ZnO thin films have many petential applications such as surface acoustic wave、transparent conducting devices、pressure/gas-sensitive devices and buffer layer because of its high electromechanical coupling coefficient、low dielectric constant、high transmittance、high chemical stability and its excellent pressure/gas-sensitivity. ZnO thin films were deposited on the Si(111)、sapphire(001) and glass substrates by the means of FJL-560 magnetron sputtering system,and the XRD、SEM、AFM、Hall、Raman、PL,et al, were employed to characterize the film’s crystal structure,surface morphology, optical and electrical properties.The results are summarized as follow: The effect of substrate temperature、sputtering power、sputtering pressure on the structure and optical properties of the ZnO thin films grown on Si(111) were investigated by different means of analysis. An optimized result with a substrate temperature of 300℃、sputtering power of 60W、sputtering pressure of 2Pa was achieved.The annealing were carried out for the ZnO films at different temperature,and the experimental results indicated that in the annealing temperature range of 400-800℃,the film stress was induced and crystal quality was improved with the increasing annealing temperature. The ZnO films were prepared on sapphire substrates at different Ar and O2 gas flow ra