ZnO基薄膜的制备及其紫外光电导特性研究-光学工程专业论文.docxVIP

万方数据 万方数据 摘要 摘要 ZnO 是一种重要的Ⅱ-Ⅵ族化合物半导体材料，它具有良好的化学稳定性和热 学稳定性。在室温下，它的禁带宽度为 3.37eV，激子束缚能高达 60meV。所以它 在光电技术方面的应用成为当今研究的热点，同时在短波长发光器件，压电器件， 光探测器件以及太阳能电池等领域有着广泛的应用。 本论文阐述了 ZnO 薄膜的各种制备技术及原理，并概括了 ZnO 薄膜研究的最 新进展。在石英衬底上采用射频磁控反应溅射的方法沉积 ZnO 薄膜，并采用 X 射 线衍射(XRD)、扫描电子显微镜（SEM）、紫外-可见光谱分析等方法对不同氧氩比、 不同衬底温度和不同溅射气压生长出的 ZnO 薄膜的结构和光电性能进行了表征， 研究了不同样品的紫外光电导性能。接着为了改善 ZnO 薄膜的紫外光电导性能， 对薄膜表面进行改性。主要包括：表面重金属改性、表面 N 掺杂、表面 AlN 包覆 层和表面 TiO2 包覆层。并对各种表面改性方法制备的薄膜的紫外光电导特性进行 分析比较。研究发现，表面极薄的金属层能够使 ZnO 薄膜的响应度增加 2-5 倍， 而表面 N 掺杂和表面包覆层，可以减小 ZnO 薄膜的响应时间。 关键词：ZnO 薄膜，紫外光电导，响应度，响应时间，表面状态 I ABSTRACT ABSTRACT ZnO is an importantⅡ-Ⅵgroup semiconductor material with high chemical and thermal stability. At room temperature，ZnO has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV. It has attracted intensive research effort and becomes the research hotspot. Therefore, it has a broad application on UV light emitters, piezoelectric devices, light detect device and solar cell. In this paper，the application and principles of various ZnO growth techniques are illustrated，and the up-to-date researching progress is reported. The thin films are synthesized by RF Reactive Magnetron Sputtering on the quartz substrates. The structure and properties are characterized by X-ray diffraction(XRD), Scan electron spectroscopy(SEM), and UV-vis spectrophotometer. The effects of sputtering coefficients such as substrate temperature，sputtering gas composition and pressure on the films’ quality are clarified. To improve the UV photoconductivity of the ZnO thin films, the film surface was modified. Include: metal surface modification, surface N doping, the surface layer AlN and TiO2. Various surface modification methods of the films were analyzed and compared characteristics of UV photoconductivity. Study found that very thin metal layer to the surface of ZnO thin films to increase the responsiveness of 2-5 times, while the surface of N doping and surface coating layer can reduce the response time of ZnO thin