数值模拟研究半导体断路开关电流截断特性.docVIP

数值模拟研究半导体断路开关电流截断特性 　　摘 要:半导体断路开关(SOS)效应的发现,促进了全固态脉冲功率源技术的发展和应用。采用一维流体模型,利用SOS数值模拟程序对SOS二极管P??+-P-N-N??+结构的电流截断特性进行了数值模拟研究。研究了SOS二极管P区扩散深度、外电路参数对SOS电流截断特性的影响。结果表明:P区扩散深度、次级储能电容C2、反向泵浦电感L??-的大小对SOS的反向电流截断时间均有较大影响;随着次级储能电容和反向泵浦电感的增大,电流截断时间增大,反向电流峰值和反向电压峰值减小。该研究对SOS二极管工艺设计和外电路优化设计具有理论意义和实用价值。 　　关键词: 半导体断路开关; 脉冲功率源; 数值模拟; 电流截断特性 　　中图分类号:TN389 文献标识码:A 　　文章编号:1004-373X(2010)12-0179-03 　　 　　Numerical Simulation of Current Interruption Characteristics in Semiconductor Cut-off Switches 　　YANG Hai-yan, ZHAO Xi-an 　　(Informatization Research Laboratory, Xi’an Military Academy, Xi’an 710108, China) 　　Abstract: The discovery of the semiconductor opening switch (SOS) effect promoted the development and applications of the all-solid-state pulsed power generator technology. A one-dimensional fluid model is adopted to study the current interuption characteristics of SOS diode P??+-P-N-N??+ structure by using SOS numerical simulation program. The influences of the ??diffusion?? depth in the diode P-type region on the current interruption characteristics of SOS diode is analyzed. The result shows that the influences of the diffusion depth of P-type region, reverse pulse inductance L??-and secondary capacitor C2 in the external circuit on the reverse current interuption time of SOS is obvious, the peak values of reverse current and reverse ??voltage?? decreases with the increase of the secondary capacitor C2 and reverse pulse inductance L??-. The results obtained in this thesis ??possesses?? a certain theoretical and practical significance for the SOS diode design and the external circuit optimization. 　　Keywords: semiconductor cut-off switch; pulsed power generator; numerical simulation; current interruption characteristics 　　 　　1991年,以LYUBUTIN S K教授为首的俄罗斯爱卡特林堡电物理研究所的研究小组在对用于高压整流的具有P??+-P-N-N??+结构二极管进行实验时发现,在一定条件下,通过二极管的高密度电流在纳秒级时间内被截断的现象,称之为半导体断路开关效应[1](SOS)。SOS效应的发现,促进了全固态脉冲功率源技术的发展和应用。基于SOS二极管的脉冲功率源,具有纳秒级电流截断时间,可获得数十kA的电流和mV级电压的高功率脉冲,脉冲重复频率可达kHz[2-3]。 　　1 半导体断路开关的基本工作