焊层空洞对IGBT芯片温度影响.docVIP

焊层空洞对IGBT芯片温度影响 　　摘 要： 焊层空洞是造成IGBT模块散热不良的主要因素，基于IGBT的七层结构，建立了IGBT模块封装结构的三维有限元模型并对其进行热分析，研究焊层空洞对IGBT芯片温度的影响。对比了有无焊层空洞时IGBT模块的整体温度分布，分析了空洞类型、空洞大小、空洞形状、空洞数量及空洞分布对IGBT芯片温度分布的影响。研究结果表明：芯片焊层空洞对芯片温度的影响较大，衬板焊层空洞对芯片温度的影响较小；贯穿型空洞对芯片温度的影响要大于非贯穿型空洞；单个空洞越大，IGBT芯片温度越高；相同形状的空洞，处于边角位置比处于焊层内部对芯片温度影响大；多个空洞分布越集中，芯片温度越高；焊层缝隙对芯片温度的影响要小于空洞对芯片温度的影响。因此，在封装过程中应避免出现芯片焊层空洞，以提高IGBT的可靠性。 　　关键词： 焊层空洞； IGBT模块； 有限元； 芯片焊层； 热分析； 芯片温度 　　中图分类号： TN32?34 文献标识码： A 文章编号： 1004?373X（2018）03?0151?06 　　Abstract： The voids in solder layer are the main factors causing the poor heat dissipation of the IGBT module. On the basis the seven?layer structure of IGBT， the three?dimensional finite element model of the IGBT module package structure was established， and perform with the thermal analysis. The overall temperature distribution of the IGBT module of the solder layer with and without voids is compared. The influence of void type， void size， void shape， void quantity and void distribution on the IGBT chip temperature distribution is analyzed. The study results show that the void in the chip solder layer has great influence on chip temperature， the void in the scaleboard solder layer has slight influence on chip temperature， the perfoliate void has greater influence on chip temperature than the non?perfoliate void， the IGBT chip temperature becomes higher with the increase of void， the position in the corner has greater influence on chip temperature than that inside the solder layer for the same shape voids， the chip temperature becomes high with the concentration of the multi?void distribution， and the influence of solder gap on chip temperature is slighter than the void. Therefore， it is necessary to avoid the chip soldering voids in the packaging process to improve the reliability of IGBT. 　　Keywords： solder void； IGBT module； finite element； chip solder layer； thermal analysis； chip temperature 　　0 引 言 　　绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor，IGBT）是由双极型三极管（BJT）和绝缘栅型场效应管（MOS）组成的复合全控型电压驱动式功率半导体器件，