宽带单片微波低噪声放大器的设计 (1).pdfVIP

Abstract Abstract Low Noise Amplifier (LNA) is the front-end of Radio Frequency receiver (RF receiver), which determines the sensitivity and noise character of RF receiver. Along with development of the monolithic microwave integrated circuit (MMIC) technology, the need of low noise amplifier with high performance expands increasingly. In this paper, a LNA covering both K and Ka band is designed based on MMIC technology with good performance. Throughout the design process, a novel bias circuit, matching circuit and feedback configuration is presented to achieve the requirements. In this paper, the basic theory of low noise amplifier is analyzed, and the design of 20GHz~30GHz broadband low noise amplifier is completed, including the design and simulation of the biasing circuits and the matching circuits. It is also completed that the biasing network design and the matching network design of the whole circuit and the analysis of the stability of the circuit. According to the working frequency band requirement, in this paper, the circuit is based on 0.15um GaAs PHEMT low noise technology to achieve the high frequency broadband amplifier circuit and low noise. The whole circuit chip is fabricated in MMIC process, using a structure with three cascaded circuits. Bias circuits are designed for each stage. Microstrip lines are used for matching networks. Input ports are matched with the least of noise and output ports are matched with the maximum power. Source feedback microtrip line is adopted in the circuit for better stability. The test results show that, the broadband MMIC low noise amplifier is integrated on a GaAs chip of 2.0mm×1.1mm, and it achieves a low noise figure of less than 3.0dB ，a high small signal gain o