ZnO光电功能薄膜材料的CMP-研究.pdf

rotationrateis surface is4．5A． 80rpm．Theroughness the flowrate RR RRof128．0nm／minandthe (3)As increases，theincreases，the slurry surface 7．4Ais at obtainedthe flowrate400ml／min． 。 roughness slurry WaS mechanism bothfrommechanicalandchemical Finally,thepolishing analyzed form ofPreston WaS isa viewpoint，the equation constantremovalratedueto chemical was calculated is purely reaction，Ro byexperiment 4．69nm／min． To sum this CMP ofzincoxidethinfilmsand up，in paper,theslurry polishingprocess were mechanismwas and RRand surface optimized．孔epolishing exploredhigh high-flat WaSobtained．Itis forthe of devices greatsignificancefollow-uppreparationoptoelectronic basedon thin ZnO films． thin words：zincoxide Key films，CMP,surface roughness，removalrate，polishing mechanism 目 录 第一章绪论 l 1．1化学机械平坦化技术的发展……………………………………………………．．1 1．1．1化学机械平坦化……………………………………………………………．．1 1．1．2 CMP在IC领域的应用、发展及面临的挑战………………………………．．2 1．2光电功能材料氧化锌化学机械平坦化国内外研究状况………………………．．7 1．3本论文研究的目的和意义………………………………………………………．．9 IA本论文的研究的思路与内容……………………………………………………10 1．4．1本论文的研究思路…………………………………………………………．．10 1A．2本论文研究的主要内容……………………………………………………10 第二章样品的制备与实验测试表征