单晶硅生长过程中工艺参数对少子寿命的影响-材料物理与化学专业论文.docx

单晶硅生长过程中工艺参数对少子寿命的影响 THE EFFECTS OF THE TECHNOLOGICAL PARAMETERS ON MINORITY CARRIER LIFETIME IN CZ Si GROWTH PROCESS ABSTRACT Under the background of the global economic rapid development, the fossil energy was increasingly exhausted, and the environment problem becomes increasingly serious. In this paper, the feasible measures are given about the issue that reducing solar cell cost and improving the conversion efficiency of solar cell. Solar energy has advantages of inexhaustible and pollution-free, becomes the best choice in all new energy. While in solar cell materials, monocrystalline silicon solar cells take the largest ratio. Minority carrier lifetime is very important parameters to affect the efficiency of solar cells. Minority carrier lifetime directly affect monocrystalline silicon solar cells conversion efficiency. Based on the actual production, the influence of the technological parameters to Minority carrier lifetime was discussed ，and the most favorable technological parameters were obtained in this paper. In this paper, 24 thermal field was installed in KX260 crystal growth system with 120kg material , 5 different metal level were installed and other technological parameters were same, then 5 ingots (φ200mm, P type, 100 , resistivity: 2Ωcm) were produced. The relationship between different metal level and Minority carrier lifetime was analyzed. The experimental results were obtained: With the ascension of metal level, Minority carrier lifetime gradually reduced. Then, 24 thermal field was installed in KX260 crystal growth system with 120kg material, Crucible Rotation was installed 8rpm and Crystal Rotation was installed 6rpm, 10rpm, 14rpm, other technological parameters were same, 3 ingots (φ200mm, P type, 100 , resistivity: 2Ωcm) were produced. Then the relationship between different Crystal Rotation and Minority carrier lifetime was analyzed. The experimental results were obtained: the faster Crystal Rotation, the better unifor