放电等离子技术连接SiC陶瓷化学工程与技术专业论文.docx

内蒙古 内蒙古工业大学硕士学位论文 bending test to the connection at room and high temperature. The room temperature results show that the SiC ceramic connected with 3Ti+1.2Si+2C+0.2Al at 1600℃ have the highest strength at room temperature, the value is 133.3MPa. The high temperature results show that the samples connected with Ti3SiC2 have lower strength, but the strength of samples connected with 3Ti+1.2Si+2C+0.2Al and TiC+Si are much higher, the value got at 1200℃ is 118.9MPa and 84.6MPa respectively. By comparing we can get that the bending strength of samples connected with Ti3SiC2 are lower under room and high temperature; the samples connected with TiC+Si have the lowest strength at room temperature, but it have better strength at high temperature; the samples connected with 3Ti+1.2Si+2C+0.2Al both have high bending strength under room and high temperature, and the effect is good. Key words: SiC ceramic；Ti3SiC2；Spark plasma sintering；Joining of ceramic 目 录 HYPERLINK \l _bookmark0 第一章 绪论1 HYPERLINK \l _bookmark1 1.1 SiC 陶瓷的研究现状1 HYPERLINK \l _bookmark2 1.2 SiC 连接的研究 4 HYPERLINK \l _bookmark3 1.2.1 陶瓷连接的应用背景4 HYPERLINK \l _bookmark4 1.2.2 陶瓷连接方法的发展4 HYPERLINK \l _bookmark5 1.2.3 陶瓷连接中间层材料的发展6 HYPERLINK \l _bookmark6 1.3 Ti3SiC2 材料的研究进展 7 HYPERLINK \l _bookmark7 1.3.1 Ti3SiC2 的结构和性质 8 HYPERLINK \l _bookmark8 1.3.2 Ti3SiC2 的合成制备现状 10 HYPERLINK \l _bookmark9 1.4 放电等离子加工技术研究现状12 HYPERLINK \l _bookmark10 1.4.1 放电等离子加工技术简介 12 HYPERLINK \l _bookmark11 1.4.2 放电等离子加工技术的应用13 HYPERLINK \l _bookmark12 1.5 本文的研究内容及意义14 HYPERLINK \l _bookmark13 第二章 实验方法与表征方法15 HYPERLINK \l _bookmark14 2.1 实验材料与设备15 HYPERLINK \l _bookmark15 2.1.1 实验材料 15 HYPERLINK \l _bookmark16 2.1.2 实验设备 15 HYPERLINK \l _bookmark17 2.2 实验工艺过程16 HYPERLINK \l _bookmark18 2.2.1 Ti3SiC2 材料制备工艺 16 HYPERLINK \l _bookmark19 2.2.2 SiC 陶瓷连接工艺 17 HYPERLINK \l _bookmark20 2.3 实验样品测试与表征方法17 HYPERLINK \l _bookmark21 2.3.1 X-射线衍射物相分析(XRD) 17 HYPERLINK \l _bookmark22 2.3.2 扫描电镜分析(SEM) 18 HYPERLINK \l _