高过载硅微结构MEMS电容器分析-测试计量技术及仪器专业论文.docxVIP

中北大学学位论文 中北大学学位论文 万方数据 万方数据 Research on high overload silicon-based MEMS capacitors Abstract Focusing on the urgent need of high-performance energy storage device for fuse system, the MEMS capacitor with anti-high overload, high hematocrit value, small size and low firing voltage was mainly researched. Theoretical foundation and technical support of design and application for fuse firing capacitor were established. In this paper, the mechanical properties of MEMS capacitor was simulated by using ANYSYS software, and the simulation results confirmed the reliability of the high aspect ration deep trench structure. The etching process was simulated to determine the feasibility of dry etching through TCAD simulation software. High aspect ratio deep trench structure was fabricated by photolithography, developing, stripping, deep reactive ion etching (DRIE) and a series of MEMS process. The verticality and roughness of the deep trench were analyzed. The verticality of the deep trench has been improved significantly by adjusting the etch/passivation period from the original 5/3s to 5/4s and the roughness of the deep trench sidewalls surface has deceased through several alternating cycles of dry oxidation - corrosion - dry oxidation - corrosion. The functional film layers of MEMS MIM capacitor were deposited through atomic layer deposition techniques. The upper and lower electrodes both were TiN(10nm) + W (100nm), and the dielectric layer was Al2O3 55nm (or 35nm). The electrical characteristics of the MEMS MIM capacitor was tested, and the results showed that when the Al2O3 dielectric thickness was 55nm, the breakdown voltage of the capacitor reached 32.5V; when the Al2O3 dielectric thickness was 35nm, the average breakdown voltage reached 26V, showing a good resistance characteristic to high voltage. The leakage current was in the microampere or less in both cases, and the average capacitance of single MEMS MIM capacitor was 4.88×10-6F. The functional film layers of MEMS