基于bdd的抗坏血酸氧化酶传感器的制备与性能研究-物理电子学专业论文.docxVIP

摘要本论文以金刚石薄膜、生物传感器、化学修饰电极为理论基础，将掺硼盒刚石(BDDl 摘要 本论文以金刚石薄膜、生物传感器、化学修饰电极为理论基础，将掺硼盒刚石(BDDl 薄膜优异的性质和酶的催化能力结合起来，以BDD薄膜电极为基底，分别采用共价键 合／交联法、包埋法、电化学聚合法把抗坏血酸氧化酶修饰于BDD薄膜电极表面，制得 抗坏血酸氧化酶生物传感器电极。利用循环伏安法对三种电极的电化学性能进行测定和 表征，对比分析三者对抗坏血酸的检测效果。较未修饰的BDD薄膜电极，修饰后的电 极峰电流增大且峰电位减小，表明经化学修饰后，该电极降低了检测抗坏血酸的过电位， 灵敏度提高，最高检测限达1×10q1 mol／L。 共价键合／交联法通过酰胺键的连接使抗坏血酸氧化酶固定在氨基化的金刚石表面， 修饰剂接着牢固，电极可沈涤、浸泡，导电性、反复性优于电化学聚合型和包埋型修饰 电极，检测限为1 X 10。10mol／L。包埋法将含酶的壳聚糖溶液涂覆在电极表面，含酶的溶 质涂层干燥后形成壳聚糖酶膜。该电极制备简单，但稳定性和反复性较电化学聚合型、 共价键合／交联型电极差，检测限为1×10。10mol／L。电化学聚合法是在邻苯二胺的氧化 聚合过程中将酶嵌入载体材料，固化过程一次性完成，可通过控制聚合过程中电位值来 控制嵌入的酶量，所得的酶层浓度均匀。该电极电化学n向应速度、灵敏度比共价键合型、 包埋型修饰电极快，检测限达1×10川mol／L。 关键词：掺硼金刚石薄膜抗坏血酸氧化酶生物传感器酶固定化 AbstractThis Abstract This article taking diamond films，biosensors，chemically modified electrode as the theoretical basis，combined boron-doped diamond(BDD)film with ascorbic acid oxidase．Taking boron-doped diamond thin film electrode as the substrate，this article adopted the methods of covalent bonding，embedding，as well aS electrochemical polymerization to modify ascorbic acid oxidase onto the BDD electrode，and thus achieved the ascorbic acid oxidase biosensor electrode．Then three modified electrodes were used as the working electrodes to test the ascorbic acid．According to the comparative analysis on the testing results of different modified electrodes on ascorbic acid，it shows that compared to the BDD electrodes not modified，those modified ones have larger peak current and smaller spike potential．This means that chemically modified BDD electrode is able to reduce the active over potential in testing ascorbic acid，and could overcome the interference of electroactive substances．ascorbic acid oxidase． The covalent／bonding method could bond the ascorbic acid oxidase units onto the surface of the BDD electrons，and the attachment is firm through this modification agent，the electrode is washable and could be soaked，in addition that it has better conductivity, repeatability,and stability than the electrodes of both the electrochem