溅射参量对Si薄膜自晶化程度的影响-材料科学与工程专业论文.docxVIP

西安理工大学硕士学位论文 II Abstract Title :. INFLUENCE ON SPUTTERING PARAMETERS OE Si THIN FILM SELF-CRYST AL LlZATION Major : Material Science and Engineering Name :YongPeng QIAO Supervisor : Prof. Bailing JIANG Signature: 队队 QI-Ao Signature:BIiμ Abstract The task prepared two s ts of a certain degree of crystallization of Si-based Si solar film，using the radiofrequency magnetron sputtering method through the regulation of Ar g出 flow rate and the size of negative substrate bias，and detected the thickness ，micro structure，micro . morphology，grain size and the distribution and lightJelec位ical per岛rmanceof the films using x- Ray Di佳action Instrument (XRD)， Scan Electronic Microsc拼 (SEM)， Atomic Force Microscope (AFM)，Transmission Electronic Microscope (TEM)，Ultraviolet Spectrophotometer (lN-VIS) and Minority Carrier Lifetime Tester(HS-CLT) ，maily discussed the influence of Ar gas flow rate and subs位ate negative bias on the deposition rate，也e grain .growth，and lightJelectrical 阳formance ofthe films，the result shows 由at: (1)As the extension of film growth time，in the direction of film growth there appears an obvious nanometer grain，and along wi由the growth of film，its intemal grain distribution and size changes obviously，more c10ser to the surface，the crystal grain more fibrous distribution，the larger the grain size. Using X-Ray Diffraction and Transmission Electron Microscopy to analysis it is conc1uded 由at wi也 the increase of Ar g出 flow rate，film crystallization rate and grain size 缸e dropped，atomic force microscopic photographs shows membrane micro surface roughness rises with Ar gas flow rate increased. It is concluded the increase of Ar gas flow rate is not good for growth of spontaneous crystallization in 也e process of film growth and the improvement of film micros仕ucture 缸ld morphology. ο) Wi也 the increase of Ar g出 flow rate，Scanning Electron Microscopy shows film thickness of section as monotonically decreasing，optical transmittance presen臼 the change trend of first inc