金红石TiO2阵列薄膜的制备、掺杂及其性能研究-环境科学专业论文.docxVIP

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金红石TiO2阵列薄膜的制备、掺杂及其性能研究-环境科学专业论文.docx

AbstractAbstract Abstract Abstract At present,the rapid development of world economy,energy and the environment has become the main problem of the social development and human progress.Human resources of solar energy and solar energy conversion technology requirements has become more and more urgent.Semiconductor photocatalytic technology using semiconductor.While semiconductor material under the atmospheric pressure can use sunlight to degrade environmental pollutants,effectively solve the presem serious environmental problems.Semiconductor photocatalysis material.The semiconductor photocatalytic technology has become the main way to solve the pollution of the environment and new energy utilization one. Ti02 as photocatalyst due to its low cost,Gold Ti02 as semiconductor photocatalyst in produce electron hole after exposure to the light easy to composite greatly reduce its photoelectric chemical activity.Ti02 as the photocatalyst for the state of powder,the powder state many disadvantages exist in the real application,such as investment after the photocatalytic reaction in the solution difficult,this leads to repeated low utilization will also cause secondary pollution.To solve the problem in the application of the flaws in Ti02,in the research of Ti02 is mainly concentrated in two aspects,on the one hand enlarge Ti02 absorption spectra and improve its inhibition of light after light electronic and optical born hole composite ability,and improve the utilization rate of the sun and light catalytic efficiency.On the other hand new Ti02 photocatalyst in the application form in the application does not cause secondary pollution and improve the ability to reuse. In this article,the preparation of conductive glass FTO as base,water thermal synthesis is a one—dimensional nanostructures of rutile Ti02 thin film on the array.When the experimental condition is too acid butyl ester dosing quantity is 0.04 mol/L,25 h reaction time,water fluid temperature 1 80℃,400℃calcination

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