晶圆背面颜色异常的研究-集成电路工程专业论文.docxVIP

II II RESEACH ON WAFER BACKSIDE DISCOLOR ISSUE ABSTRACT During the semiconductor inline inspection, engineers always found wafer backside discolor. Single wafer scraped for the backside discolor and can’t been fabrication-out, even backside had peeling defect, which could cause more wafers scraped for defect issue. This dissertation shows us the mechanism of discolor firstly, which is caused by the worse uniformity of the films’ thickness (SEM cut data gives us the best evidence). Then it describes the film’s structures detail, and chooses the chemical based on their chemical properties. At last it gives us the best solution: using 49% HF to handle the SiO2Si3N4 and using 100:1 HNO3: HF to handle the Poly-silicon if they are damaged. For the handling time, if wafers backside have peeling defect, or cause wafer defocus or overlay out of spec or cause rapid thermal anneal tool’s alarm, we have to handle the wafer at front end of line slightly, then handle again at backend of line (We can’t remove all backside films, which have special function to free of damage during the process). If they can’t impact other wafers or the following process, we propose to handle the wafer at the last time of fabrication -out. At the same time, make sure the dissociated ions are dissolved and let wafer free of crystal defect. This dissertation also summary the root cause of wafer backside discolors. Single wafer handling tool’s chemical leakage, e-chuck position abnormal and wafer cross are major reasons of wafer backside discolors. Single wafer handling tool leakage has relationship with suck-back valve; e-chuck position abnormal, which is caused by longer life time parts, can damage wafer backside film combined with the polymer striper’s chemical etching. All these three reasons can cause wafer backside discolor. At last, this dissertation gives the better solutions for discolor reduction: add inline III III monitor and inspection, add offline monitor, enhance monitor and do cycle tes