光刻工艺重复图形失效问题分析和防范-集成电路工程专业论文.docxVIP

ABSTRACT At 21st century, according to china semiconductor company, 65 nm technology had been passed, 45/40 nm technology also are released at china semiconductor company, 32/28 nm technology productor had completed developement now. So china semiconductor company must shortened the gap between the world advanced semiconductor company, in order to keep the company development, the key factor are that develope the advanced technology , keep the line yield and gain the revenue. Because chip CD narrow down, semiconductor litho process has to faced more challenge since it is the most important process in semiconductor manufactory. During regular operation, litho repeating defect is the first yield killer, and induced wafer yield loss, even caused wafer scrap. It is the line excursion and will impact semiconductor compay revenue. Particle contamination, mask HAZE, ESD damage, mask scratch, scanner exposure unit contamination are the key index of litho repeating defect. This paper introduced the basic theory of litho process, including resist coating, exposure, developer, Overlay and Critical Demetion inline check. Then introduced mask and basic photomask manufacturing process, introduced the relationship between mask and litho repeating defect. This paper analyzed the real litho repeating defect case that happened during semiconductor manufactory, described 4 litho repeating defect case, trouble shooting method, finding and conclusion. In-line wafer inspectin and mask offline inspection is the most effective tools for Litho repeating defect reduction, in world wild semiconductor manufactory, bright and dark filed inspection sytem are used for wafer inspection, UV inspection system and IRIS scan are used for mask inspection. At last chapter, this paper provided the total solution about litho repeating defect reduction according to the experience, include mask storage environment improvement, HAZE issue improvement, lithi area particle improvement, scanner exposure proce