半导体物理与器件课程设计翻译.docVIP

go atlas TITLE Bipolar BVCEO simulation # Silvaco International 1994 mesh x.m l=0 spac=0.1 x.m l=2 spac=0.1 y.m l=0 spac=0.002 y.m l=1 spac=0.10 region num=1 silicon electrode num=1 name=emitter left length=0.8 electrode num=2 name=base right length=0.5 y.max=0 electrode num=3 name=collector bottom doping reg=1 uniform n.type conc=5e15 doping reg=1 gauss n.type conc=1e17 peak=1.0 char=0.2 doping reg=1 gauss p.type conc=1e17 peak=0.05 junct=0.15 doping reg=1 gauss n.type conc=5e19 peak=0.0 junct=0.05 x.right=0.8 doping reg=1 gauss p.type conc=5e19 peak=0.0 char=0.08 x.left=1.5 save outf=bjtex05_0.str tonyplot bjtex05_0.str -set bjtex05_0.set # set poly emitter contact name=emitter n.poly surf.rec material taun0=5e-6 taup0=5e-6 # set models models bipolar print impact selb solve init method newton trap solve prev solve vbase=0.025 solve vbase=0.05 solve vbase=0.2 contact name=base current method newton trap ir.tol=1.e-20 ix.tol=1.e-20 solve ibase=3.e-15 log outf=bjtex05.log master # ramp collector voltage solve vcollector=0.25 solve vcollector=0.5 solve vcollector=1 solve vcollector=3 solve vcollector=5 solve vstep=0.5 vfinal=10 name=collector compl=5.e-11 p=3 # plot results tonyplot bjtex05.log -set bjtex05_log.set quit 去阿特拉斯 标题双极BVCEO仿真 # SILVACO国际1994 网格 x.m L = 0 = 0.1分 x.m L = 2 = 0.1分 y.m L = 0 = 0.002分 y.m L = 1 = 0.10分 区数= 1的硅 电极数= 1名=发射器左长度= 0.8 电极数= 2名=基础长度= 0.5 = 0 y.max权 电极数= 3名=器底部 1 n.type浓度均匀掺杂reg = = 5e15 章= 1高斯n.type掺杂浓度= 1e17峰值= 1字符= 0.2 章= 1高斯p.type掺杂浓度= 1e17峰值= 0.05 = 0.15球 章= 1高斯n.type掺杂浓度= 0 = 0.05 = 5e19峰结x.right = 0.8 章= 1高斯p.type掺杂浓度= 0 = 0.08 = 5e19峰煤焦x.left = 1.5 保存bjtex05_0.str outf = tonyplot bjtex05_0.str集bjtex05_0.set #集聚辐射源 联系人姓名=发射器n.poly surf.rec 材料taun0 = 5e-6 taup0 = 5e-6 #集模型 双极打印模式 影响本身 解决初始化 牛顿法的陷阱 解决沪指 解决波动= 0.025 解决波动= 0.05 解决波动= 0.2 联系人姓名=基极电流 方法牛顿阱红外。1.e-20 ix.tol 1.e-20 TOL = = 解决3.e-15 IBASE = 日志outf = bjtex05.log大师 #匝道集电极电压 解决vcollector = 0.25 解决vcollector = 0.5 解决vcollector = 1 解决vcollector = 3