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ABSTRACT
Time-Delay Integration (TDI) image sensor is a type of sensor capturing images by scanning. Compared with the conventional line-scan image sensors, TDI image sensors have the advantages of high sensitivity and high signal-to-noise ratio (SNR), which makes it more suitable for the application in dark or image capturing for fast moving objects. Consequently, TDI image sensors have been widely applied in space remote sensing, aerial photography, industrial detection and security monitoring. Compared with CCD TDI image sensors, those sensors based on CMOS manufacturing process exhibit their superiority in manufacturing cost, power consumption and integrability. As the photosensitive element of CMOS image sensor, the active pixels play an important role in the captured image quality. Based on CMOS process platform, the paper will focus on the research of the active pixel design for TDI CMOS image sensor.
The operation mode of TDI CMOS image sensor is analyzed, and it is concluded that the TDI mode is closely related to the charge transfer velocity as well as the dark current level, which is the also the direction and key point of pixel design. Based on the CMOS process platform, several pixel structures have been verified. On the basis of the analysis and evaluation of the experimental data, the optimized design of the large pixel has been achieved. Adopting the designed pixels, a TDI CMOS image
sensor with 128 stages is designed and verified by 0.18um CMOS process,and the
test results indicates that the sensitivity and SNR of the sensor have been greatly improved. With respect to the special requirements on TDI CMOS image sensors, such as low power, high dynamic range and low cost, the corresponding optional solutions are proposed based on the optimization of pixel structures, which are constructive suggestions on promoting the performance of TDI CMOS image sensor.
The creative work of the paper includes:
For improving the charge transfer in large pixels, a sc
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