射频感性耦合等离子体中调谐基片自偏压的振荡现象-等离子体物理专业论文.docxVIP

劓频感性耦合等离于体中调谐箍片白偏压的振荡现象摘要 劓频感性耦合等离于体中调谐箍片白偏压的振荡现象 摘要 射频实验小组专门从事ICP(inductive coupling plasma)等离子体基片调谐自 偏压的物理特性方面的研究工作。在以前的实验中，首次发现了基片调谐偏压的 跳变、双稳回滞现象，并且对此进行了详细的研究。 在对基片调谐偏压的跳变、双稳回滞现象进行研究的过程中，又发现了一 种新的现象，这就是基片调谐偏匪的振荡现象。射频基片偏压振荡是指在一定的 等离子放电参数范围内，当外部调回路阻抗处于一定值域中，基片上偏压发生的 一种低频振荡现象。频率的大小在1000----6000Hz之间，振荡幅度在IOV左右。 实验针对射频基片偏压振荡现象的各个方面，设计了大量实验，探讨了自 振荡的产生条件、特性等，并分析了自振荡现象的成因，给出了定性的解释。 实验结果表明这种射频基片偏压振荡现象与等离子体放电参数以及凋谐电 路参数等多种因素密切相联系。产生这种振荡的能量来源是ICP等离子体中容性 耦合，其激励机制是等离子体鞘层电容非线性特性与外部调谐电路阻抗特性正反 馈作用。 关键词：射频、调谐基片、基片偏压、自振荡、鞘层 射频感性耦台等离子体中调谐基片自偏压的振荡现象Abstract 射频感性耦台等离子体中调谐基片自偏压的振荡现象 Abstract The RF(Rad i 0 Frequency)research group spec i a l i se i n the physical characteristic of ICP(i nductiVe coupIed PI asma)tuned substrate self-bi as． Not l ong ago，a new phenomenon that there was b i state，jumped de I ay i n tuned substrSte self—bias was found for the fi rst time in an exper iment．and researched in deta-I． I n course of exper i ment of b i state．jumped de I ay phenomenon．another new phenomenon．the f l uctuat i on of tuned substrate se l f-b i as．was found agai n．The fIuctuation of tuned substrate seIf—bi as i s a low frequency fl uctuat；on that comes into bei ng when the rf PIasma discharges at a spec i a I parameter and the reactance of tuned circuit iS in a deftnite value．The frequency of the fluctuation is about 100m一6000Hz．the swing iS 10V or SO． Based on the various aspect of the fluctuation，a large amount of experiment was carried on．The naissance，behavior and speciality of the fluctuation was explored，and the course of which was also analyzed．A qualitative explain was put forward． Experimental results show that the f I uctuat i on of tuned substrate se I f—b i as was determ i ned by d i scharge gas pressure．d i scharge power and tuning ci rCUit parameterS etc．The fIuctuation exi sts i s because of there i S capaeiti ve coup|ing in lCP system and sheath capacitance i s nonIInear The non l i nea r change of sheath capac itance operates Wi th tuned c i rcu i t． resu I ts