铝垫工艺晶须缺陷的改善及管控-中国科技论文在线.PDF

第11卷第10 期 Vol.11 No.10 2018 年 5 月 May 2018 铝垫工艺晶须缺陷的改善及管控 1，2 1 2 2* 柳小敏 ，黄其煜 ，胡彬彬 ，蔡俊晟 （1. 上海交通大学电子信息与电气工程学院，上海 200240 ； 2. 上海华力微电子有限公司，上海 201203 ） 摘要：运用物理气相沉积（physical vapor deposition ，PVD ）方法制备铝薄膜，简要概括了PVD 铝薄膜工艺和 设备腔体，重点分析了铝薄膜沉积温度及腔体环境杂质对晶须缺陷的影响，并从腔体的日常维护角度出发， 提出腔体环境杂质的管控手段和减少腔体维护后杂质含量的方法，使晶须缺陷数量稳定并保持在较低水平。 关键词：半导体技术；铝垫工艺；晶须缺陷；沉积温度；环境杂质 中图分类号：TN305.99 文献标识码：A 文章编号：1674-2850(2018)10-1031-08 Improvement and management of whisker defect in aluminum pad process 1, 2 1 2 2 LIU Xiaomin , HUANG Qiyu , HU Binbin , CAI Junsheng (1. School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; 2. Shanghai Huali Microelectronics Corporation, Shanghai 201203, China) Abstract: The aluminum film is prepared by the physical vapor deposition (PVD) method, PVD aluminum film process and the equipment chamber are briefly introduced, and the effects of deposition temperature and chamber environment impurity on the whisker defect are mainly analyzed in this paper. Finally, a new method of managing and controlling impurity in the chamber environment is put forward, as well as the ways of reducing the impurity content after chamber maintenance, both of which can keep the whisker defect stable and also at a low level. Key words: semiconductor technology; aluminum pad process; whisker defect; deposition temperature; environment impurity 0 引言 随着半导体技术的发展