具不同边界掺杂浓度突波抑制器二极体之模拟.pptVIP

具不同邊界摻雜濃度突波抑制器二極體之模擬、製程與量測 Introduction Transient Voltage Suppressors(TVS ) are off-chip devices designed for EOS / ESD protection. This exp is focused on different structure (1) Conventional P/N , (2) Blanket implanted , (3) LOCOS Diode performance How TVS works in Circuit -1 Conclusion LOCOS and Blanket implanted structure can effective increase breakdown voltage and reduce leakage current by reduce E-field in termination design. In 1e15 dosage , depletion region width is wider than 2e15 dosage structure, so Cj in 1e15 structure is smaller than 2e15 structure. And because of edge uniformity effect , the capacitance can be observed with difference in different termination dosage. For surge performance , major impact factor is in main junction implantation , not in termination design . There is about 10% difference for Ipp between 1e15 and 2e15 main implant dosage. * * 學生:汪海寧( 指導教授:胡振國 博士