风电电力电子器件IGBT.ppt

* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * How: Clamping via the gate and the gate driver output stage The gate is charged partially via the gate driver output stage Efficient and precise clamping, Low risk of instability Collector Emitter Over-Voltage Protection Performance of the protection is not influenced by the gate resistor Design of the output stage is critical in terms of response time The driving transistor Q2 must be switched off and Q1 switched on within 100ns However, this is just in theory, the practice is very different!! * Collector Emitter Over-Voltage Protection Disconnection between the gate emitter voltage and the collector current is reality which makes protection very difficult Gate of the internal MOSFET is discharged below the Miller’s plateau before the BJT starts turning-off Thus, the gate emitter voltage is completely disconnected from the collector current No any control of the collector current from the gate emitter voltage!! * Collector Emitter Over-Voltage Protection The BJT is turning off and the collector emitter voltage is increasing, Once the voltage reaches the clamping diode threshold voltage, the diode starts conducting and charging the gate capacitance But, due to the gate impedance (inductance and resistance) and the capacitance, the gate voltage is delayed! Delay of only 50ns at dvCE/dt of 5kV/us generates an over-shoot of 250V ! As a consequence, the collector emitter voltage reaches the limit The system can start oscillating, IGBT over-voltage failure The delay depends on the gate current, and The gate current depends on the gate emitter voltage, which is limited by the gate supply voltage VCC. Not possible to reduce delay time! * Collector Emitter Over-Voltage Protection Dynamic resistance of the clamping diode Dz Clamping voltage of the clamping diode strongly depends on the clamping current The higher current the higher clamping voltage Three serie