Adel S.Sedra微电子电路期中复习.pptVIP

Review;Characteristics of this subject:;How to study this subject:;Devices ;;Diodes:;Majority carriers--- Majority carrier is only determined by the impurity, but independent of temperature Minority carriers---only generated by thermal ionization and are strongly affected by temperature .;Some important results:;Intrinsic Semiconductor(cont’d);Characteristics of Silicon Junction Diodes;The Diode Models and applications;;Physical Structure;Operation Modes;Current-voltage Characteristics ;Output Curves for CB Configuration;The equivalent circuit in (a) represents the BJT as a voltage-controlled current source (a transconductance amplifier), The equivalent circuit in (b) represents the BJT as a current-controlled current source (a current amplifier).;These models explicitly show the emitter resistance re rather than the base resistance rp featured in the hybrid-p model.;Summary of model parameters;Application of the small-signal equivalent circuit-the analysis process;Large voltage gain Inverting amplifier Large current gain Input resistance is relatively low. Output resistance is relatively high. Frequency response is rather poor.;Very low input resistance High output resistance Short-circuit current gain is nearly unity High voltage gain Noninverting amplifier Current buffer Excellent high-frequency performance;Noninverting amplifier High input resistance Low output resistance Voltage gain is smaller than but very close to unity Large current gain The last or output stage of cascade amplifier Frequency response is excellent well;The CE configuration is the best suited for realizing the amplifier gain. Including RE provides performance improvements at the expense of gain reduction. The CB configuration only has the typical application in amplifier. Much superior high-frequency response. The emitter follower can be used as a voltage buffer and exists in output stage of a multistage amplifier. ;2.5.3 the comparison of three basic amplifiers ;Exercise:chapter3: Rea