为逆变器应用而优化的带过电压控制特性的IGBT芯片技术_图文.docVIP

Summary V-IGBT modules General Based on 1200V Trench technology Chip size similar to IGBT4 Same diode used as with IGBT4 – CAL 4 Chip characteristics Switches faster than IGBT4 (di/dton-values if same gate resistors are used, resulting in less Eon-losses If di/dton is in the same range like IGBT4 the losses are also similar The IGBT can be slowed down by higher gate resistors and reaches similar behavior like IGBT4 The switch-off behavior of the different chips is similar V-IGBT and IGBT4 have the same SOA (Safe Operating Area Over voltages are lower at high DC-link voltage compared to IGBT4 Switch-off characteristics (du/dt can be influenced by gate resistor Gate charge is 90% higher than for IGBT4 N.Pluschke 201103 Conclusion N.Pluschke 201103 V-chip available in many housings N.Pluschke 201103 N.Pluschke 201103