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5.2 异质栅器件 1（Dual material gate MOSFET) Electric flux at the interface of buried oxide and the back-channel is continuous for both the metal gates. Using C11(x) and C12(x) in Similarly for the region under metal 2, we obtain the following expressions The potential at the source end is Surface potential at the interface of the two dissimilar metals is continuous From the four equations, we get Dual material gate Single material gate The minimum potential of the front-channel can be calculated from Threshold Voltage Electric Field Effect of M1 gate length 2 Dual Material Gate SOI MOSFET with a Single Halo Using the continuity of electric flux and surface potential at the boundaries of the three silicon film zones, built-in potential drop across the source-body junction and the applied drain-source bias Vds, According the continuity of electric flux at the front and buried oxide-silicon interfaces, it can be obtained Considering tbtf and tbtsi * * Electric flux at the gate/front-oxide interface is continuous for both the metal gates. Using: We get We get The solution is of the form The solution is of the form Using it in We get The potential at the drain end is Using it in We get Using it in We get Electric flux at the interface of the two dissimilar metals is continuous Using it in We get The four equations about A, B, C, and D Using We get SCE DMG DIBL SMG DIBL Velocity and HCE
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