基于C60有源层有机场效应管的制作.docVIP

基于C60有源层有机场效应晶体管的制作 摘 要 有机场效应晶体管（organic field-effected transistors OFET）是以有机物作为有源层的场效应晶体管，其经过近三十年的研究已经深入运用于诸多领域。在最近的相关报道中，大多以P沟道OFET为主，并且以并五苯（pentacene）为有源层的场效应晶体管则可以与无机晶体管相媲美，其技术已经相当成熟。在集成电路中需要n型，p型晶体管组成互补电路，这样可以降低能耗，增加电路的稳定性。所以关于N型OFET的研究非常有必要和紧迫的。而以富勒烯（C60)作为有源层的OFET就是一种很好的N型半导体制作材料。本文具体内容有 （1）阅读文献，掌握OFET的基本知识，设计出制作的OFET的方案。 （2）制备N型OFET，在玻璃基板上以氧化铟锡（ITO）为栅极，聚甲基丙烯酸甲酯（PMMA)为绝缘层，富勒烯（C60）为有源层，以成本较低的金属铝（Al）作为源漏电极制备成所需的N沟道的底栅顶接触的OFET。 （3）对所制备好的以C60为有源层的OFET特性研究，包括对其迁移率的计算，其输出特性的研究，转移特性研究 （4）对界面修饰的OFET性能的比较。 关键词 有机场效应晶体管 C60 N型半导体 迁移率 Research of Function Regulation on the C60 Organic Field-Effect Transistor ABSTRACT Organic Field Effect Transistors(OFET) have attracted considerable attention in the past thirty years. After several years of expansive development, great achievements have made in the field of the preparation of high-performance organic devices.In recent reports, mostly in P channel OFET is given priority to, and pentacene as the active layer of the semiconductor can be comparable to those, inorganic semiconductor technology already quite mature. So the study of n-type OFET very necessary and urgent. The fullerene (C60） as the active layer OFET is a kind of very good N type semiconductor materials. the specific contentIn this paper, ?（1）preparation of n-type OFET, on glass substrate with indium tin oxide (ITO) for grid, polymethyl methacrylate (PMMA) as the insulating layer, the fullerene (C60) as the active layer, with lower cost of aluminum (Al) as a electrode and use molybdenum trioxide (MoO3) modified electrode. Preparation into the N channel at the bottom of the grid contact OFET For the preparation of good with the active layer of C60 OFET characteristics research, including the calculation of its mobility, its output characteristic research, transfer characteristic research The performance of the electrode modified OFET comparison Key Words：OFET, C60 N type semiconductor Mobility rate 目 录 TOC \o 1-3 \h \u 10839 第一