半导体生产过程.pptVIP

Key Variables in Oxidation Temperature - reaction rate - solid state diffusion Oxidizing species - wet oxidation is much faster than dry oxidation Surface cleanliness - metallic contamination can catalyze reaction - quality of oxide grown (interface states) 第三十页，共四十九页。 Etching Etching is the process where unwanted areas of films are removed by either dissolving them in a wet chemical solution (Wet Etching) or by reacting them with gases in a plasma to form volatile products (Dry Etching). Resist protects areas which are to remain. In some cases a hard mask, usually patterned layers of SiO2 or Si3N4, are used when the etch selectivity to photoresist is low or the etching environment causes resist to delaminate. This is part of lithography - pattern transfer. 第三十一页，共四十九页。 第三十二页，共四十九页。 Wet Chemical Etching Wet etches: - are in general isotropic (not used to etch features less than ≈ 3 μm) - achieve high selectivities for most film combinations - capable of high throughputs - use comparably cheap equipment - can have resist adhesion problems - can etch just about anything 第三十三页，共四十九页。 Example Wet Processes For SiO2 etching - HF + NH4F+H20 (buffered oxide etch or BOE) For Si3N4 - Hot phosphoric acid: H3PO4 at 180 °C - need to use oxide hard mask Silicon - Nitric, HF, acetic acids - HNO3 + HF + CH3COOH + H2O Aluminum - Acetic, nitric, phosphoric acids at 35-45 °C - CH3COOH+HNO3+H3PO4 第三十四页，共四十九页。 What is a plasma (glow discharge)? A plasma is a partially ionized gas made up of equal parts positively and negatively charged particles. Plasmas are generated by flowing gases through an electric or magnetic field. These fields remove electrons from some of the gas molecules. The liberated electrons are accelerated, or energized, by the fields. The energetic electrons slam into other gas molecules, liberating more electrons, which are accelerated and liberate more electrons from gas molecules,