oDrive相关参考材料-NTMFS5C628N-D.PDF

NTMFS5C628N MOSFET - Power, Single N-Channel 60 V, 3.0 m, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D 60 V 3.0 m @ 10 V 150 A MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Parameter Symbol Value Unit D (5) Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID 150 A Current RJC (Notes 1, 3) Steady TC = 100°C 110 G (4) State Power Dissipation TC = 25°C PD 110 W RJC (Note 1) S (1,2,3) TC = 100°C 56 N−CHANNEL MOSFET Continuous Drain T = 25°C ID 28 A A Current RJA (Notes 1, 2, 3) T = 100°C 20 Steady A