利用空间电荷限制电流方法计算MoO3_CBP的空穴迁移率.docVIP

  利用空间电荷限制电流方法计算 MoO3:CBP 的空穴迁移率# 王振国1，郝玉英1,2，杨倩1，孙钦君1，王华2，许并社2** 5 （1.太原理工大学物理与光电工程学院，太原 030024； 2. 教育部重点实验室界面材料科学与工程，太原理工大学，太原 030024） 摘要：利用空间电荷限制电流方法计算 MoO3:CBP 的空穴迁移率，掺杂浓度范围是 6%-20%，当 MoO3 与 CBP 共蒸时，与未掺杂的 CBP 薄膜相比可以观察到电导率显著的增加。 高水平的掺 杂可以在界面处形成准欧姆接触。在电场为 0.3 MV/cm 下,掺杂浓度为 16%时，空穴迁移率 10 达到 6.0×10 -5 2 移率为 4.2×10 -5 2 -5 2 · s，降低迁移率的原因主要是由于的界面陷阱。 关键词：有机电致发光器件；掺杂；电导率；迁移率 中图分类号：O469 15 Investigation of hole mobility of MoO3-doped 4,4′ -Bis(carbazol-9-yl) -biphenyl by using space-charge-limited currents Zhenguo Wang1, Yuying Hao1,2, Qian Yang1, Qinjun Sun1, Hua Wang2, Bingshe Xu2 20 25 30 35 40 (1. The College of Physics and Optoelectronics, Taiyuan University of Technology, TaiYuan 030024; 2. The Key Laboratory of Interface Science and Engineering in Advanced Materials of Taiyuan University of Technology, TaiYuan 030024) Abstract: The hole mobility of p-type doped 4,4′-Bis(carbazol-9-yl)-biphenyl(CBP) with MoO3 at the various doping concentration (8%-20%) has been estimated by using space-charge-limited current measurements. When MoO3 is co-evaporated with CBP, a significant increase in conductivity is observed, compared to intrinsic CBP thin films. A high level of doping has been used for a quasi-Ohmic contact. For an electric field of 0.3 MV/cm, the estimated hole mobility of the device with a doping concentration of 16% reaches 6.0×10-5 cm2/V s at 60nm thickness. Even in a lower electric field of 0.1 MV/cm, the hole mobility ,4.2 × 10-5cm2/V s, is nearly three times higher than the value of 1.63× 10-5 cm2/V s obtained for the typical hole transport material NPB. The authors suggest that the lower mobility is caused by the interfacial trap states. Key words: Organic light-emitting diode; Doping; Conductivity; Mobility 0 引言 近年来，OLED 的技术和产品以各种优点、巨大的发展潜力和应用价值,引了各界的广 泛关注和认可[1]。OLED 已经逐步的走向应用领域。但是就目前而言，还存在一些待解决， 在 OLED 中所使用的有机半导体材料具有本征载流子浓度低、导电率低、载流子注入能力 差等缺点[2-4]。所以 OLED 器件的广泛应用受到很多问题亟限制，针对以上提出的问题，提 出了 P 型方式