利用深能级瞬态谱技术检测多晶硅太阳能电池的深能级.pdfVIP

中国科技论文在线 利用深能级瞬态谱技术检测多晶硅太阳能 电池的深能级 李葛亮，李永祥，邓彤，窦智，刘爱民** 5 （大连理工大学物理与光电工程学院，辽宁大连 116024 ） 摘要：利用Booton7200 快速电容计、温度控制“冷井”装置和Tektronix DPO 7104C 数字 荧光示波器等仪器自行设计并搭建了基本的深能级瞬态谱（DLTS）测试系统。利用该系统， 测量了多晶硅太阳能电池的电容-温度曲线。实验发现当电池两端外加反向偏压为-400mV 10 时，有4 个明显深能级。通过改变选定的率窗 t1、t2，我们得到了多晶硅电池中相关深能 级缺陷的Arrehnius 图，并得到了多晶硅太阳能电池杂质能级的相关物理信息。 关键词：多晶硅太阳能电池；深能级瞬态谱；缺陷能级；深能级中心；瞬态电容 中图分类号：O474 15 characterization of deep energy level in polycrystalline silicon solar cell by deep level transient spectroscopy 1 2 2 2 1 Li Geliang , Li Yongxiang , Deng Tong , Dou Zhi , Liu Aimin (1. School of Physics and Optoelectronic Technology, Dalian University of Technology; 2. School of Physics and Optoelectronic Technology, Dalian University of Technology,) 20 Abstract: A basic test system of deep level transient spectroscopy (DLTS) was built up with a Booton7200 fast capacitance meter, a temperature controlled cool well and a digital phosphor oscilloscope. The C-T curve of polycrystalline silicon solar cells was carried out by the system. After repeatedly calculation and processing, we got a dlts spectrum with 4 obvious peaks at the temperatures of 130K, 164K, 226K and 271Kwhile sample was reverse biased with a voltage of 25 -400mV. And the spectrum was changed with various reverse bias voltages. Different t1and t2 of were used to analyze dlts spectrum, and the Arrehnius curve of deep level defects in polycrystalline silicon solar cell was also given, thus to detect the relative information of impurity energy level in the polycrystalline silicon solar cells. Key words: Polycrystalline s