阶梯厚度漂移区SOI横向高压器件.pdfVIP

阶梯厚度漂移区SOI横向高压器件 郭宇锋啦王志功2 揍拦；本文搬出7～秘舶耐难投术——．横向变脬度v1J投冰，以及鏊于此拨=1l之的…种鞣蹴艉器件络拘——阶梯漂 移隧SO!窒吉}磊I，借肋j==：_．维器种份真器MEDICI。：；；l{入研究’r谶绪掏的耐骥帆璎。研究澈明。除梯漂移聪结褥研程 掇商难孥电疆5％～10％的嗣时，漯穆医电戳犬l黼凌降低48％～52％，穗疆漂移隧尺寸也W熬小10％，艮来阁… 除或’二阶阶梯眭|】¨，达到接近线性漂移隧的珊懋绶襞。避一步研究淡咧，和线性溅阶梯掺杂潆移涟栩圪，谈{銎}辫逐 l≮：ff：I：艺释：麓入、涮避H寸涎磷渝谴鞭、!__l：芝贼本低等优点。 关键涌：SOl；阶梯漂褥隧； 1蠡穷电滕；横闷蹙掺袋 ANovelSOlLateral Devicewith HighVoltage Drift Step Region GUO H，WANG Yufeng Zhigon92 ofPostsand (I。School University Telecommunications， ofOptoelectroniCEngineering，Nanjing 210003，China；2．InstituteofRF-＆OE-lCs，Southeast210096。China) Nanjing University,Nanjing Abstract：Basedonanovel Lateral new Thickness(VET)．a sustaining-voltagetechnique～Varied with drift is mechanismof newdevice SOI device the h{ghvoltage step regionsproposed．Theoperation is thetwo-dimensionalsemiconductorsimulatorMEDICI．TheresuItsshows investigateddetaillyusing of that drift canenableincreaseof5％一lO％inbreakdown 48％一52％in step region voltage．decrease drift shrinkof10％indie orPro Callleadto ideal resistance，and size．Singlesteps approximately breakdownanddriftresistancein withthelineardrift thickness． voltage comparison region tOthelinearand drifl newstructurehasthe