Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides.pdfVIP
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Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides.pdf
维普资讯
PropagationofUltra。·fastFemtosecond
Pulsesin Silic0n一0n—insulat0rOpticalW aveguides
WU jian_wei,LUOFeng—guang ,CristianodeMelloGallep
(1.InstituteofOptoelectronicsScienceandEngineeringandW uhanNationalLaboratoryfor
Optoelectronics,HuazhongUniversityofScienceandTechnology,W uhan430074,CHN ;
2.TeIec0mmunicationTechnologyDivision/CESET,StateUniversityofCampinas,Limeira,SP,Brazil)
Abstract:A completetheoreticalmodeling,avoidinganypriori—assumption,isdeducedanddemonstratedfor
ultra-fastfemtosecond opticalpulses in silicon—on-insulator opticalwaveguideswhich includes the group
velocitvdispersion,third-orderdisPersion,self-phaseandcross—phasemodulations,self-steepeningandshock
formation,Raman depletion, propagation loss,two-photon absorption, free-carrierabsorption’and free-
carrierdispersion.Fina11y,thetemporaland spectralcharacteristicsof100fsopticalpulsesat1.55btm are
numerica11yobserved in 5-mm一1ong waveguideswhileconsidering differentinitialchirpsand incidentpeak
intensitylevels.
Keywords:integratedoptics;silicon—on-insulator;ultrafastoptics
CLCnumber:TN3 Documentcode:A ArticleID:lO07— 0206(2007)04--0261--07
l IntrOductiOn
Silico on—insulator(SOI) technology emerged as a new promising platiorm tor optoelectrom
integration.In recentyears,rapid progresshasbeen madein developing variousapplications,SUCh
lasing,amplification,wavelength conversion, optics modulation, logic gate, etc·, based on silcon
waveguidesbyusingthestrongnonlineareffectsduetohighindex differencebetween silicon and silicon
oxide,andtheoptica1field can beconfined into anareathatisapproximately 100timessmallerthanthe
moda1areaina silicafiberc卜.Therefore,in siliconwaveguides,theopticalpowerdensity can
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