HBT功率放大元器件介绍.pptVIP

Confidential Proprietary Introduction of SUNTEK High Speed InGaP HBT Contents 1) Suntek High Speed InGaP HBT Epi Structure 2) InGaP HBT Cross Section and Process Flow 3) Pattern Dimension 4) SEM Top View of High Speed InGaP HBT with Air-Bridge process 5) Gummel plots and I-V 6) High Speed InGaP HBT RF Performance Two InGaP layers in the emitter Suntek High Speed InGaP HBT Epi Structure InGaP HBT Cross Section and Process Flow Emitter metal (WSiN) Emitter mesa: Dry etching Selective wet etching Base mesa I/I isolation Base metal Collector etch and metal MIM dielectric and Via 1 Thin film NiCr resistor (30?/?) Metal 1 Passivation Air-bridge (M2) process ps: TaN is also available (50?/?) Polyimide process also available Collector Contact Layer Collector Layer Guard Ring Base Layer Emitter Contact Layer Emitter Layer Heat sink Emitter air bridge Pattern Dimension Air-Bridge Process Polyimide Process SEM Top View of High Speed InGaP HBT with Air-Bridge process 1. 4x20um2 2x20um2 Two side base Two side collector Air-bridge-in 2. 1x20um2 Two side base Two side collector Air-bridge-out 3. 1x5um2, 1x10um2 2x5um2, 2x10um2 2x15um2 One side base One side collector Gummel plots and I-V The ideality factor of collector current and base current is 1.02 and 1.15, respectively. High Speed InGaP HBT RF Spec and Performance Need Information from Customer Process: Polyimide or Air-bridge process Final wafer thickness Device DC and RF spec. and operating condition Minimum device dimension Model requirement S-parameter (bias condition) Active Model Passive Model Confidential Proprietary Sheet2 Sheet1 經濟部業界開發產業技術執行細部計畫書摘要表 綜合資料 （一） 公司簡介 （二） 申請政府補助原因說明 （三） 計畫概述 （四） 預期效益（包括對產業之貢獻） Owner 工作項目 細部項目 壹、 公司概況 一、 基本資料 二、 營運及財務狀況 三、 經營團隊結構 四、 研發能力與實績 五、 經營理念、策略及其他 貳、開發技術說明 一、 背景與說明 二、 國內外技術/市場現